Max Planck Institute of Microstructure Physics, Halle, Germany
Commercialization of Giant Magnetoresistance Effect while working at IBM Corporation enhancing storage densities of hard disks approaching 1 Tbit/in2 [1997]
Patented proposal of novel non-volatile magnetic random access memory (MRAM) in 1995 based on the Tunneling Magneto Resistance (TMR) and reaching values of TMR over 200% at room temperature by 2004 Nature Materials [2004]
Magnetic tunneling transistor (MTT) is a 3-terminal device, which combines spin-dependent tunneling with spin filtering in order to achieve highly spin-polarized ballistic electrons in 1999
In 2008, proposed “Racetrack memory”. This memory is what Parkin would describe as being “innately three-dimensional”, in contrast to the inherent two-dimensional structure of both magnetic disk drives (data is stored in a single two-dimensional sheet of magnetic material) and silicon based microelectronics (logic is carried out using a single sheet of transistors fabricated in the surface of a single crystal of silicon).
Conversion of spin current into charge current due to the spin orbit interaction; the effect is called the inverse spin Hall effect Saitoh APL[2006]
Conversion of temperature gradient across a thin magnetic film(Y3Fe5O12 YIG Yttrium Iron Garnet) leads to non equilibrium concentration gradient of spin waves/magnons. This leads to generation of spin current which in turn generates a charge current in an adjacent coupled high spin orbit material like Platinum due to the inverse spin Hall effect; the effect is called spin Seebeck Effect Uchida Nature[2008]
The “Unite Mixte de Physique CNRS/Thales” (UMPhy), created in 1995, is a joint laboratory between CNRS and the industrial company Thales (previously Thomson-CSF). This fruitful collaboration, initially centered on magnetic metal multilayers, led first of all to the discovery of the Giant Magnetoresistance effect (GMR) in 1988 whose major importance was recognized by the 2007 Physics Nobel prize. It is also considered as the birth of the field of spintronics with now major applications in everyday’s life
Topological spin textures stabilized by the competitition between the chiral Dzyaloshinski Moriya interaction, anisotropy, dipolar interactions in interfacial systems with inversion symmetry breaking; These textures are so called magnetic skyrmions gaining attention in the community of spintronics for their potential of next generation of fault tolerant magnetic storage entities Reference: Skyrmions on Racetrack Nature Nanotechnology [2013]
Brillouin Light Scattering studies on interfacial DMI systems revealed insight into the variation of the sign of DMI constant with the 5d elements (W, Ta, Ir, Pt) PRL[2018]
Electrical Switching of perpendicular Ferromagnetic layers Reference : “Pure Electrical Switching of a Single Ferromagnetic Layer with Perpendicular Magnetization” Ma [2018] Nature
Seminal work on SHE induced spin orbit torque switching in Ta/CoFeB/MgO perpendicular and inplane anisotropy films
Proposal of a novel 3 terminal SOT MRAM memory for separation of writing line and reading line to increase the endurance of the element. Liu[2012] Science
Andre Thiaville
- CNRS + Univeristy of Paris SUD, France
- First to propose non adiabatic torque for Current induced Domain Wall motion in nanowires as the existing modified LLG accounting the adiabatic transfer of angular momentum from the current polarization to the magnetization of the domain wall while traversing was overestimating the threshold current density by an order of magnitude. Thiaville ‘‘Micromagnetic understanding of current-driven domain wall motion in patterned nanowires’’ EPL[2005]
Develops Collective Coordinate Models for DW motion; CCMs are alternative to micrmagnetic simulations and offer easier modelling with fewer parameters yet fairly accurate modelling in comparison to micromagnetic simulations Reference : “Collective coordinate models of domain wall motion in perpendicularly magnetized systems under the spin hall effect and longitudinal fields” JMMM [2017]
We have listed the workers in spintronics and their important contributions
